Alkaline cell - LR series (AA)
Alkaline Cell ;
production mix, at plant ;
LR Alkaline | GLO | agg | Sphera |
Alkaline cell - LR series (AAA)
Alkaline Cell ;
production mix, at plant ;
LR Alkaline | GLO | agg | Sphera |
Alkaline cell - LR series (C)
Alkaline Cell ;
production mix, at plant ;
LR Alkaline | GLO | agg | Sphera |
Alkaline cell - LR series (D)
Alkaline Cell ;
production mix, at plant ;
LR Alkaline | GLO | agg | Sphera |
Assembly line SMD (1SP, 2CS, 1CP, 1R, 1Rf) throughput 300/h - open input printed circuit board
technology mix ;
production mix, at plant ;
SMD (1SP, 2CS, 1CP, 1R, 1Rf) throughput 300/h | GLO | p-agg | Sphera |
Assembly line SMD (1SP,1CS,1Rf) throughput 300/h - open input printed circuit board
technology mix ;
production mix, at plant ;
SMD (1SP,1CS,1Rf) throughput 300/h | GLO | p-agg | Sphera |
Assembly line SMD (1SP,1CS,1Rf) throughput 600/h - open input printed circuit board
technology mix ;
production mix, at plant ;
SMD (1SP,1CS,1Rf) throughput 600/h | GLO | p-agg | Sphera |
Assembly line SMD (1SP,2CS,1CP,1R,1Rf) throughput 600/h - open input printed circuit board
technology mix ;
production mix, at plant ;
SMD (1SP,2CS,1CP,1R,1Rf) throughput 600/h | GLO | p-agg | Sphera |
Assembly line THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 300/h - open input printed circuit board
technology mix ;
production mix, at plant ;
THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 300/h | GLO | p-agg | Sphera |
Assembly line THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 600/h - open input printed circuit board
technology mix ;
production mix, at plant ;
THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 600/h | GLO | p-agg | Sphera |
Cable 1-core power 18AWG PVC (16 g/m) D2.9
technology mix ;
production mix, at plant ;
tinned Cu wire, PVC insulation | GLO | agg | Sphera |
Cable 1-core signal 24AWG mPPE (3.0 g/m) D1.1
technology mix ;
production mix, at plant ;
tinned Cu wire, mPPE insulation | GLO | agg | Sphera |
Cable 1-core signal 24AWG PE (4.5 g/m) D1.4
technology mix ;
production mix, at plant ;
tinned Cu wire, PE insulation | GLO | agg | Sphera |
Cable 1-core signal 24AWG PTFE (3.0 g/m) D0.9
technology mix ;
production mix, at plant ;
tinned Cu wire, PTFE insulation | GLO | agg | Sphera |
Cable 1-core signal 24AWG PVC (4.5 g/m) D1.4
technology mix ;
production mix, at plant ;
tinned Cu wire, PVC insulation | GLO | agg | Sphera |
Cable 3-core mains power 10A/13A 16AWG mPPE (60 g/m) D6.3
technology mix ;
production mix, at plant ;
bare Cu wire, mPPE insulation, mPPE jacket, un... | GLO | agg | Sphera |
Cable 3-core mains power 10A/13A 16AWG PVC (100 g/m) D8
technology mix ;
production mix, at plant ;
bare Cu wire, PVC insulation, PVC jacket, unsh... | GLO | agg | Sphera |
Capacitor Al-capacitor axial THT (21g) D21x40
technology mix ;
production mix, at plant ;
(21g) D21x40 | GLO | agg | Sphera |
Capacitor Al-capacitor axial THT (300mg) D3.3x11
technology mix ;
production mix, at plant ;
(300mg) D3.3x11 | GLO | agg | Sphera |
Capacitor Al-capacitor axial THT (6g) D14x25
technology mix ;
production mix, at plant ;
(6g) D14x25 | GLO | agg | Sphera |
Capacitor Al-capacitor radial THT (110mg) D3x5
technology mix ;
production mix, at plant ;
(110mg) D3x5 | GLO | agg | Sphera |
Capacitor Al-capacitor radial THT (15.41g) D18x41
technology mix ;
production mix, at plant ;
(15.41g) D18x41 | GLO | agg | Sphera |
Capacitor Al-capacitor radial THT (5.65g) D12.5x30
technology mix ;
production mix, at plant ;
(5.65g) D12.5x30 | GLO | agg | Sphera |
Capacitor Al-capacitor SMD (1.29g) D10x10.2
technology mix ;
production mix, at plant ;
(1.29g) D10x10.2 | GLO | agg | Sphera |
Capacitor Al-capacitor SMD (2.54g) D12.5x13.5
technology mix ;
production mix, at plant ;
(2.54g) D12.5x13.5 | GLO | agg | Sphera |
Capacitor Al-capacitor SMD (300mg) D6.3x5.4
technology mix ;
production mix, at plant ;
(300mg) D6.3x5.4 | GLO | agg | Sphera |
Capacitor Al-capacitor SMD (5.01g) D16x16.5
technology mix ;
production mix, at plant ;
(5.01g) D16x16.5 | GLO | agg | Sphera |
Capacitor Al-capacitor SMD (7.89g) D18x21.5
technology mix ;
production mix, at plant ;
(7.89g) D18x21.5 | GLO | agg | Sphera |
Capacitor Al-capacitor SMD (80mg) D3x5.4
technology mix ;
production mix, at plant ;
(80mg) D3x5.4 | GLO | agg | Sphera |
Capacitor Aluminium screw terminal (220g) D 51.6 x 75 mm
technology mix ;
production mix, at plant ;
(220g) D 51.6 x 75 mm | GLO | agg | Sphera |
Capacitor Aluminium screw terminal (400g) D 64.3 x 96 mm
technology mix ;
production mix, at plant ;
(400g) D 64.3 x 96 mm | GLO | agg | Sphera |
Capacitor ceramic MLCC 01005 (0.054mg) D 0.4x0.2x0.22
technology mix ;
production mix, at plant ;
(0.054mg) D 0.4x0.2x0.22 | GLO | agg | Sphera |
Capacitor ceramic MLCC 01005 (0.054mg) D 0.4x0.2x0.22 (Base Metals)
technology mix ;
production mix, at plant ;
(0.054mg) D 0.4x0.2x0.22 (Base Metals) | GLO | agg | Sphera |
Capacitor ceramic MLCC 0201 (0.17mg) D 0.6x0.3x0.3
technology mix ;
production mix, at plant ;
(0.17mg) D 0.6x0.3x0.3 | GLO | agg | Sphera |
Capacitor ceramic MLCC 0201 (0.17mg) D 0.6x0.3x0.3 (Base Metals)
technology mix ;
production mix, at plant ;
(0.17mg) D 0.6x0.3x0.3 (Base Metals) | GLO | agg | Sphera |
Capacitor ceramic MLCC 0603 (6mg) D 1.6x0.8x0.8
technology mix ;
production mix, at plant ;
(6mg) D 1.6x0.8x0.8 | GLO | agg | Sphera |
Capacitor ceramic MLCC 0603 (6mg) D 1.6x0.8x0.8 (Base Metals)
technology mix ;
production mix, at plant ;
(6mg) D 1.6x0.8x0.8 (Base Metals) | GLO | agg | Sphera |
Capacitor ceramic MLCC 1210 (50mg) D 3.2x1.6x1.6 (Base Metals)
technology mix ;
production mix, at plant ;
(50mg) D 3.2x1.6x1.6 (Base Metals) | GLO | agg | Sphera |
Capacitor ceramic MLCC 1210 (50mg) D 3.2x3.2x1.6
technology mix ;
production mix, at plant ;
(50mg) D 3.2x3.2x1.6 | GLO | agg | Sphera |
Capacitor ceramic MLCC 2220 (450mg) D 5.7x5.0x2.5
technology mix ;
production mix, at plant ;
(450mg) D 5.7x5.0x2.5 | GLO | agg | Sphera |
Capacitor ceramic MLCC 2220 (450mg) D 5.7x5.0x2.5 (Base Metals)
technology mix ;
production mix, at plant ;
(450mg) D 5.7x5.0x2.5 (Base Metals) | GLO | agg | Sphera |
Capacitor film-capacitor boxed RM15 (3.2g) 17.7x10x16.5
technology mix ;
production mix, at plant ;
(3.2g) 17.7x10x16.5 | GLO | agg | Sphera |
Capacitor film-capacitor boxed RM27.5 (20.4g) 31x21x31
technology mix ;
production mix, at plant ;
(20.4g) 31x21x31 | GLO | agg | Sphera |
Capacitor film-capacitor boxed RM5 (600mg) 7.2x6x11
technology mix ;
production mix, at plant ;
(600mg) 7.2x6x11 | GLO | agg | Sphera |
Capacitor film-capacitor unboxed RM15 (2.6g) 15x7x12
technology mix ;
production mix, at plant ;
(2.6g) 15x7x12 | GLO | agg | Sphera |
Capacitor film-capacitor unboxed RM27.5 (11g) 27.5x11x17.5
technology mix ;
production mix, at plant ;
(11g) 27.5x11x17.5 | GLO | agg | Sphera |
Capacitor film-capacitor unboxed RM7.5 (150mg) 7.5x1.5x6.0
technology mix ;
production mix, at plant ;
(150mg) 7.5x1.5x6.0 | GLO | agg | Sphera |
Capacitor tantal SMD E (500mg) 7.3x4.3x4.1
technology mix ;
production mix, at plant ;
(500mg) 7.3x4.3x4.1 | GLO | agg | Sphera |
Capacitor tantal SMD Y (25mg) 3.2x1.6x1.6
technology mix ;
production mix, at plant ;
(25mg) 3.2x1.6x1.6 | GLO | agg | Sphera |
Capacitor tantal SMD Z (8mg) 2x1.25x1.2
technology mix ;
production mix, at plant ;
(8mg) 2x1.25x1.2 | GLO | agg | Sphera |
Coil miniature wound SDR0302 (81mg) D3x2.5
technology mix ;
production mix, at plant ;
SDR0302 (81mg) D3x2.5 | GLO | agg | Sphera |
Coil miniature wound SDR1006 (1.16g) D9.8x5.8
technology mix ;
production mix, at plant ;
SDR1006 (1.16g) D9.8x5.8 | GLO | agg | Sphera |
Coil miniature wound SRP1040 (2.652g) D11.8x4.2
technology mix ;
production mix, at plant ;
SRP1040 (2.652g) D11.8x4.2 | GLO | agg | Sphera |
Coil miniature wound SRR0804 (580mg) D10.5x3.8
technology mix ;
production mix, at plant ;
SRR0804 (580mg) D10.5x3.8 | GLO | agg | Sphera |
Coil miniature wound SRR1806 (3.12g) D18.3x6.8
technology mix ;
production mix, at plant ;
SRR1806 (3.12g) D18.3x6.8 | GLO | agg | Sphera |
Coil multilayer chip 0402 (1mg) 1x0.5x0.5
technology mix ;
production mix, at plant ;
0402 (1mg) 1x0.5x0.5 | GLO | agg | Sphera |
Coil multilayer chip 1812 (108mg) 4.5x3.2x1.5
technology mix ;
production mix, at plant ;
(108mg) 4.5x3.2x1.5 | GLO | agg | Sphera |
Coil quad-chokes (2.5g) 14.5x13.3x8.0
technology mix ;
production mix, at plant ;
(2.5g) 14.5x13.3x8.0 | GLO | agg | Sphera |
Coin cell (Li/Poly-carbonmonofluoride - RB0.8; RS0.65)
Coin cell ;
production mix, at plant ;
BR1632A | GLO | agg | Sphera |
Components mixer
| GLO | u-so | Sphera |
Connector Schuko CEE 7/16 (15 g, 2 pins) - based on parametric plan model
technology mix; unit of reference flow in dataset is given in mass (kg) ;
production mix, at producer ;
2- pin connector, 15 g overall weight | GLO | agg | Sphera |
Diode MELF (130mg) D2.6x5.2
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
130mg, D2.6x5.2 | GLO | agg | Sphera |
Diode mMELF (40mg) D1.6x3.8
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
40mg, D1.6x3.8 | GLO | agg | Sphera |
Diode power DO214/219 (93mg) 4.3x3.6x2.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Diode power THT DO201 (1.12g) D5.3x9.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
1.12g, D5.3x9.5 | GLO | agg | Sphera |
Diode power THT DO35 (150mg) D1.76x3.77
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Diode signal DO214/219 (14.8mg) 3.9x1.9x1
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Diode signal SOD123/323/523 (1.59mg) 0.8x0.75x1.6 with Au-Bondwire
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Diode signal SOD123/323/523 (9.26mg) 2.4x1.6x1 with Au-Bondwire
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
EMS Shielding
technology mix ;
production mix, at plant ;
EMS | GLO | agg | Sphera |
Filter SAW (25mg) 3x7x1
technology mix ;
production mix, at plant ;
(25mg) 3x7x1 | GLO | agg | Sphera |
IC BGA 144 (181mg) 10x10mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(181mg) 10x10mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC BGA 144 (360mg) 13X13mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(360mg) 13X13mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC BGA 144 (466mg) 13x13x1.75 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(466mg) 13x13x1.75 | GLO | agg | Sphera |
IC BGA 1515 (14.6 g) 40x40 mm CMOS logic (14 nm)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(14.94g) 40x38 mm CMOS logic (14 nm node) | GLO | agg | Sphera |
IC BGA 256 (2.62g) 27x27x2.36 CMOS logic (90 nm node) [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(2.62g) 27x27x2.36 CMOS logic (90 nm node) | GLO | agg | Sphera |
IC BGA 256 (4g) 27x27 mm CMOS logic (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(4g) 27x27 mm CMOS logic (45 nm node) | GLO | agg | Sphera |
IC BGA 48 (70mg) 6x6x1.1mm MPU generic (130 nm node) [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(70mg) 6x6x1.1mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC BGA 48 (72mg) 8x6 mm MPU generic (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(72mg) 8x6 mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC BGA 672 (4.92g) 35x35x2.36 CMOS logic (14 nm node) [based on models 2004-2014]
front-end and back-end processing of the wafer, including the Czochralski method of silicon production, and packaging of the chip ;
production mix, at plant ;
14 nm CMOS process flow: Bulk silicon FinFET, ... | GLO | agg | Sphera |
IC BGA 672 (4.92g) 35x35x2.36 CMOS logic (65 nm node) [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(4.92g) 35x35x2.36 CMOS logic (65 nm node) | GLO | agg | Sphera |
IC BGA 672 (6.6g) 27x27 mm CMOS (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(6.6g) 27x27 mm CMOS logic (14 nm node) | GLO | agg | Sphera |
IC DFN 10 (22.3 mg) 3x3 mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(22.3 mg) 3x3 mm CMOS logic (14 nm node) | GLO | agg | Sphera |
IC DIP 24 (1.7g) 35.5x8.2 mm CMOS logic (250 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(1.7g) 35.5x8.2 mm CMOS logic (250 nm node) | GLO | agg | Sphera |
IC DIP 24 (2.59g) 35.5x8.2x3.8 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(2.59g) 35.5x8.2x3.8 | GLO | agg | Sphera |
IC DIP 42 (6.30g) 54.6x14.1x3.9 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(6.30g) 54.6x14.1x3.9 | GLO | agg | Sphera |
IC DIP 8 (480mg) 10.9x6.6x3.3 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(480mg) 10.9x6.6x3.3 | GLO | agg | Sphera |
IC DIP 8 (538mg) 10.9x6.6 mm CMOS logic (250 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(538mg) 10.9x6.6 mm CMOS logic (250 nm node) | GLO | agg | Sphera |
IC LGA 1366 (~5g) 45x42.5x~2.5 CMOS logic (14 nm node) [based on models 2004-2014]
front-end and back-end processing of the wafer, including the Czochralski method of silicon production, and packaging of the chip ;
production mix, at plant ;
14 nm CMOS process flow: Bulk silicon FinFET, ... | GLO | agg | Sphera |
IC LGA 1366 (~5g) 45x42.5x~2.5 CMOS logic (32 nm node) [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(~5g) 45x42.5x~2.5 CMOS logic (32 nm node) | GLO | agg | Sphera |
IC PLCC 20 (700mg) 8.9x8.9x3.8 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(700mg) 8.9x8.9x3.8 | GLO | agg | Sphera |
IC PLCC 20 (751mg) 9x9 mm CMOS logic (250 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(751mg) 9x9 mm CMOS logic (250 nm node) | GLO | agg | Sphera |
IC PLCC 44 (2.30g) 16.6x16.6x3.8 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(2.30g) 16.6x16.6x3.8 | GLO | agg | Sphera |
IC PLCC 44 (2.6g) 16.6x16.6 mm CMOS logic (250 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(2.6g) 16.6x16.6 mm CMOS logic (250 nm node) | GLO | agg | Sphera |
IC PLCC 68 (4.60g) 24.2x24.2x3.9 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(4.60g) 24.2x24.2x3.9 | GLO | agg | Sphera |
IC PLCC 68 (5g) 24.2x24.2 mm CMOS logic (250 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(5g) 24.2x24.2 mm CMOS logic (250 nm node) | GLO | agg | Sphera |
IC QFN 24 (61.6 mg) 4x6 mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(91.9 mg) 4x6 mm CMOS (14 nm node) | GLO | agg | Sphera |
IC QFN 76 (578.8 mg) 10x11 mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(578.8 mg) 10x11 mm CMOS logic (14 nm node) | GLO | agg | Sphera |
IC QFP 240 (6.20g) 32x32x3.5 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(6.20g) 32x32x3.5 | GLO | agg | Sphera |
IC QFP 32 (180mg) 7x7x1.5 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(180mg) 7x7x1.5 | GLO | agg | Sphera |
IC QFP 32 (184mg) 7x7 mm CMOS logic (90 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(184mg) 7x7 mm CMOS logic (90 nm node) | GLO | agg | Sphera |
IC QFP 80 (1.60g) 14x20x2.7 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(1.60g) 14x20x2.7 | GLO | agg | Sphera |
IC SO 20 (500mg) 12.8x7.5x2.3 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(500mg) 12.8x7.5x2.3 | GLO | agg | Sphera |
IC SO 20 (530mg) 12.8x7.5 mm CMOS logic (90nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(530mg) 12.8x7.5 mm CMOS logic (90nm node) | GLO | agg | Sphera |
IC SO 44 (910mg) 28.3x13.3x2.3 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(910mg) 28.3x13.3x2.3 | GLO | agg | Sphera |
IC SO 8 (76mg) 4.9x3.9 mm CMOS logic (90 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(76mg) 4.9x3.9 mm CMOS logic (90 nm node) | GLO | agg | Sphera |
IC SO 8 (80mg) 4.9x3.9x1.7 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(80mg) 4.9x3.9x1.7 | GLO | agg | Sphera |
IC SSOP 14 (120mg) 6.0x5.3x1.75 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(120mg) 6.0x5.3x1.75 | GLO | agg | Sphera |
IC SSOP 24 (123mg) 8.2x5.3 mm CMOS logic (65 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(123mg) 8.2x5.3 mm CMOS logic (65 nm node) | GLO | agg | Sphera |
IC SSOP 24 (210mg) 8.2x5.3x1.75 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(210mg) 8.2x5.3x1.75 | GLO | agg | Sphera |
IC SSOP 64 (340mg) 26x10.2x1.75 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(340mg) 26x10.2x1.75 | GLO | agg | Sphera |
IC TQFP 100 (513mg) 14x14 mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(513mg) 14x14 mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC TQFP 100 (520mg) 14x14x1.0 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(520mg) 14x14x1.0 | GLO | agg | Sphera |
IC TQFP 32 (146mg) 5x5 mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(146mg) 5x5 mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC TQFP 32 (70mg) 5x5x1.0 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
IC TQFP 32 (70mg) 5x5x1.0 | GLO | agg | Sphera |
IC TQFP 44 (260mg) 10x10x1.0 [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(260mg) 10x10x1.0 | GLO | agg | Sphera |
IC TQFP 44 (272mg) 10x10 mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(272mg) 10x10 mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC TSOP 28 (215mg) 8x13.4x1.2 DRAM [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(215mg) 8x13.4x1.2 DRAM | GLO | agg | Sphera |
IC TSOP 28 (215mg) 8x13.4x1.2 flash [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(215mg) 8x13.4x1.2 flash | GLO | agg | Sphera |
IC TSOP 28 (232mg) 8x13.4 mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(232mg) 8x13.4 mm DRAM (57 nm node) | GLO | agg | Sphera |
IC TSOP 28 (232mg) 8x13.4 mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(232mg) 8x13.4 mm flash (45 nm node) | GLO | agg | Sphera |
IC TSOP 32 (325mg) 8x20x1.2 DRAM [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(325mg) 8x20x1.2 DRAM | GLO | agg | Sphera |
IC TSOP 32 (325mg) 8x20x1.2 flash [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(325mg) 8x20x1.2 flash | GLO | agg | Sphera |
IC TSOP 32 (373mg) 8x20 nm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(373mg) 8x20 nm DRAM (57 nm node) | GLO | agg | Sphera |
IC TSOP 32 (373mg) 8x20 nm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(373mg) 8x20 nm flash (45 nm node) | GLO | agg | Sphera |
IC TSOP 56 (590mg) 14x20x1.2 DRAM [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(590mg) 14x20x1.2 DRAM | GLO | agg | Sphera |
IC TSOP 56 (590mg) 14x20x1.2 flash [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(590mg) 14x20x1.2 flash | GLO | agg | Sphera |
IC TSSOP 16 (59mg) 4.4x5.0 mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(59mg) 4.4x5.0 mm DRAM (57 nm node) | GLO | agg | Sphera |
IC TSSOP 16 (59mg) 4.4x5.0 mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(59mg) 4.4x5.0 mm flash (45 nm node) | GLO | agg | Sphera |
IC TSSOP 16 (65mg) 4.4x5.0x1.2 DRAM [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(65mg) 4.4x5.0x1.2 DRAM | GLO | agg | Sphera |
IC TSSOP 16 (65mg) 4.4x5.0x1.2 flash [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(65mg) 4.4x5.0x1.2 flash | GLO | agg | Sphera |
IC TSSOP 48 (102mg) 6.1x12.5x1.2 DRAM [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(102mg) 6.1x12.5x1.2 DRAM | GLO | agg | Sphera |
IC TSSOP 48 (102mg) 6.1x12.5x1.2 flash [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(102mg) 6.1x12.5x1.2 flash | GLO | agg | Sphera |
IC TSSOP 48 (187mg) 6.1x12.5 mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(187mg) 6.1x12.5 mm DRAM (57 nm node) | GLO | agg | Sphera |
IC TSSOP 48 (187mg) 6.1x12.5 mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(187mg) 6.1x12.5 mm flash (45 nm node) | GLO | agg | Sphera |
IC TSSOP 8 (23mg) 3x3 mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(23mg) 3x3 mm DRAM (57 nm node) | GLO | agg | Sphera |
IC TSSOP 8 (23mg) 3x3 mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(23mg) 3x3 mm flash (45 nm node) | GLO | agg | Sphera |
IC TSSOP 8 (28mg) 3.0x2.9x1.2 DRAM [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(28mg) 3.0x2.9x1.2 DRAM | GLO | agg | Sphera |
IC TSSOP 8 (28mg) 3.0x2.9x1.2 flash [based on models 2004-2014]
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(28mg) 3.0x2.9x1.2 flash | GLO | agg | Sphera |
IC WLP CSP 196 (209mg) 12x12x1.41mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(400mg) 12x12x1.41mm CMOS logic (14 nm node) | GLO | agg | Sphera |
IC WLP CSP 196 (209mg) 12x12x1.41mm CMOS logic (22 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(400mg) 12x12x1.41mm CMOS logic (22 nm node) | GLO | agg | Sphera |
IC WLP CSP 196 (209mg) 12x12x1.41mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(400mg) 12x12x1.41mm DRAM (57 nm node) | GLO | agg | Sphera |
IC WLP CSP 196 (209mg) 12x12x1.41mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(400mg) 12x12x1.41mm flash (45 nm node) | GLO | agg | Sphera |
IC WLP CSP 196 (209mg) 12x12x1.41mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(400mg) 12x12x1.41mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC WLP CSP 425 (4.78g) 19x19x1.5mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(736mg) 19x19x1.5mm CMOS logic (14 nm node) | GLO | agg | Sphera |
IC WLP CSP 425 (4.78g) 19x19x1.5mm CMOS logic (22 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(736mg) 19x19x1.5mm CMOS logic (22 nm node) | GLO | agg | Sphera |
IC WLP CSP 425 (4.78g) 19x19x1.5mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(736mg) 19x19x1.5mm DRAM (57 nm node) | GLO | agg | Sphera |
IC WLP CSP 425 (4.78g) 19x19x1.5mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(736mg) 19x19x1.5mm flash (45 nm node) | GLO | agg | Sphera |
IC WLP CSP 425 (4.78g) 19x19x1.5mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(736mg) 19x19x1.5mm MPU generic (130 nm node) | GLO | agg | Sphera |
IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(10.2mg) 3.17x3.17x0.55mm CMOS logic (14 nm no... | GLO | agg | Sphera |
IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm CMOS logic (22 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(10.2mg) 3.17x3.17x0.55mm CMOS logic (22 nm no... | GLO | agg | Sphera |
IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(10.2mg) 3.17x3.17x0.55mm DRAM (57 nm node) | GLO | agg | Sphera |
IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(10.2mg) 3.17x3.17x0.55mm flash (45 nm node) | GLO | agg | Sphera |
IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(10.2mg) 3.17x3.17x0.55mm MPU generic (130 nm ... | GLO | agg | Sphera |
Key switch Dip (79mg) 11.39x4.5x1.5
technology mix ;
production mix, at plant ;
(79mg) 11.39x4.5x1.5 | GLO | agg | Sphera |
Key switch tact (242mg) 6.2x6.3x1.8
technology mix ;
production mix, at plant ;
(242mg) 6.2x6.3x1.8 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 0.5A (235mg) Au bondwire 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
235mg, Au bondwire 9.0x7.0x4.4 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 0.5A (235mg) Flip Chip 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
235mg, Flip Chip 9.0x7.0x4.4 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 0.5A (59mg) Au bondwire 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 0.5A (59mg) Flip Chip 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
59mg, 3.5x3.5x2.0 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 1.5A (61mg) Au bondwire 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 1.5A (61mg) Flip Chip 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
61mg, 3.5x3.5x2.0 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 1A (235mg) Au bondwire 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
235mg Au bondwire 9.0x7.0x4.4 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 1A (235mg) Flip Chip 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
235mg Flip Chip 9.0x7.0x4.4 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 1A (60mg) Au bondwire 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
60mg, Au bondwire 3.5x3.5x2.0 | GLO | agg | Sphera |
LED SMD high-efficiency with lens max 1A (60mg) Flip Chip 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
LED SMD low-efficiency max 50mA (35mg) without Au 3.2x2.8x1.9
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
35mg, 3.2x2.8x1.9 | GLO | agg | Sphera |
LED THT 5mm (350mg) D5x7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Micro Speaker (2g, dynamic, Nd magnet, SMD)
technology mix ;
production mix, at plant ;
Dynamic, Nd Magnet, SMD (2g) | GLO | agg | Sphera |
Microphone (0.05g, electret condenser, SMD)
technology mix ;
production mix, at plant ;
0.05g, electret condenser, SMD | GLO | agg | Sphera |
Oscillator crystal (500mg) 11.05x4.65x2.5
technology mix ;
production mix, at plant ;
(500mg) 11.05x4.65x2.5 | GLO | agg | Sphera |
Oscillator crystal (750mg) 11.35x4.65x3.6
technology mix ;
production mix, at plant ;
(750mg) 11.35x4.65x3.6 | GLO | agg | Sphera |
Printed Wiring Board 10-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
10-layer rigid FR4 with chem-elec AuNi finish ... | GLO | agg | Sphera |
Printed Wiring Board 10-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
10-layer rigid FR4 with chemSn elecAuNi finish... | GLO | agg | Sphera |
Printed Wiring Board 10-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
10-layer rigid FR4 with HASL finish (Subtracti... | GLO | agg | Sphera |
Printed Wiring Board 12-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
12-layer rigid FR4 with chem-elec AuNi finish ... | GLO | agg | Sphera |
Printed Wiring Board 12-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
12-layer rigid FR4 with chemSn elecAuNi finish... | GLO | agg | Sphera |
Printed Wiring Board 12-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
12-layer rigid FR4 with HASL finish (Subtracti... | GLO | agg | Sphera |
Printed Wiring Board 16-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
16-layer rigid FR4 with chem-elec AuNi finish ... | GLO | agg | Sphera |
Printed Wiring Board 16-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
16-layer rigid FR4 with chemSn elecAuNi finish... | GLO | agg | Sphera |
Printed Wiring Board 16-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
16-layer rigid FR4 with HASL finish (Subtracti... | GLO | agg | Sphera |
Printed Wiring Board 1-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
1-layer rigid FR4 with chem-elec AuNi finish (... | GLO | agg | Sphera |
Printed Wiring Board 1-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
1-layer rigid FR4 with chemSn elecAuNi finish ... | GLO | agg | Sphera |
Printed Wiring Board 1-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
1-layer rigid FR4 with HASL finish (Subtractiv... | GLO | agg | Sphera |
Printed Wiring Board 2-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
2-layer rigid FR4 with chem-elec AuNi finish (... | GLO | agg | Sphera |
Printed Wiring Board 2-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
2-layer rigid FR4 with chemSn elecAuNi finish ... | GLO | agg | Sphera |
Printed Wiring Board 2-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
2-layer rigid FR4 with HASL finish (Subtractiv... | GLO | agg | Sphera |
Printed Wiring Board 4-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
4-layer rigid FR4 with chem-elec AuNi finish (... | GLO | agg | Sphera |
Printed Wiring Board 4-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
4-layer rigid FR4 with chemSn elecAuNi finish ... | GLO | agg | Sphera |
Printed Wiring Board 4-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
4-layer rigid FR4 with HASL finish (Subtractiv... | GLO | agg | Sphera |
Printed Wiring Board 8-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
8-layer rigid FR4 with chem-elec AuNi finish (... | GLO | agg | Sphera |
Printed Wiring Board 8-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
8-layer rigid FR4 with chemSn elecAuNi finish ... | GLO | agg | Sphera |
Printed Wiring Board 8-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method) ;
production mix, at plant ;
8-layer rigid FR4 with HASL finish (Subtractiv... | GLO | agg | Sphera |
Resistor flat chip 0402 (0.6mg)
technology mix ;
production mix, at plant ;
0402 (0.6mg) | GLO | agg | Sphera |
Resistor flat chip 0603 (1.9mg)
technology mix ;
production mix, at plant ;
0603 (1.9mg) | GLO | agg | Sphera |
Resistor flat chip 1206 (9.2mg)
technology mix ;
production mix, at plant ;
1206 (9.2mg) | GLO | agg | Sphera |
Resistor MELF MMA 0204 (19mg) D1.4x3.6
technology mix ;
production mix, at plant ;
0204 (19mg) D1.4x3.6 | GLO | agg | Sphera |
Resistor MELF MMB 0207 (79mg) D2.2x5.8
technology mix ;
production mix, at plant ;
0207 (79mg) D2.2x5.8 | GLO | agg | Sphera |
Resistor MELF MMU 0102 (7mg) D1.1x2.2
technology mix ;
production mix, at plant ;
0102 (7mg) D1.1x2.2 | GLO | agg | Sphera |
Resistor thick film flat chip 01005 (0.04mg)
technology mix ;
production mix, at plant ;
(0.04mg) | GLO | agg | Sphera |
Resistor thick film flat chip 0201 (0.15mg)
technology mix ;
production mix, at plant ;
(0.15mg) | GLO | agg | Sphera |
Resistor thick film flat chip 0402 (0.75mg)
technology mix ;
production mix, at plant ;
0402 (0.75mg) | GLO | agg | Sphera |
Resistor thick film flat chip 0603 (2.1mg)
technology mix ;
production mix, at plant ;
0603 (2.1mg) | GLO | agg | Sphera |
Resistor thick film flat chip 1206 (8.9mg)
technology mix ;
production mix, at plant ;
1206 (8.9mg) | GLO | agg | Sphera |
Resistor THT MBA 0204 (125mg) D1.6x3.6
technology mix ;
production mix, at plant ;
0204 (125mg) D1.6x3.6 | GLO | agg | Sphera |
Resistor THT MBB 0207 (220mg) D2.5x6.3
technology mix ;
production mix, at plant ;
0207 (220mg) D2.5x6.3 | GLO | agg | Sphera |
Resistor THT MBE 0414 (700mg) D4.0x11.9
technology mix ;
production mix, at plant ;
0414 (700mg) D4.0x11.9 | GLO | agg | Sphera |
Ring Core Coil 30g (With housing)
technology mix ;
production mix, at plant ;
30g (With housing) | GLO | agg | Sphera |
Ring Core Coil 30g (Without housing)
technology mix ;
production mix, at plant ;
30g (Without housing) | GLO | agg | Sphera |
Ring Core Coil 8 g (Without housing)
technology mix ;
production mix, at plant ;
8g (Without housing) | GLO | agg | Sphera |
Ring Core Coil 80g (With housing)
technology mix ;
production mix, at plant ;
80g (With housing) | GLO | agg | Sphera |
Ring Core Coil 80g (Without housing)
technology mix ;
production mix, at plant ;
80g (Without housing) | GLO | agg | Sphera |
Ring Core Coil 8g (With housing)
technology mix ;
production mix, at plant ;
8g (With housing) | GLO | agg | Sphera |
Solder paste AuIn18
technology mix ;
production mix, at plant ;
AuIn18 | GLO | agg | Sphera |
Solder paste AuSn20
technology mix ;
production mix, at plant ;
AuSn20 | GLO | agg | Sphera |
Solder paste InPb40
technology mix ;
production mix, at plant ;
InPb40 | GLO | agg | Sphera |
Solder paste InSn48
technology mix ;
production mix, at plant ;
InSn48 | GLO | agg | Sphera |
Solder paste SnAg2.6Cu0.3
technology mix ;
production mix, at plant ;
SnAg2.6Cu0.3 | GLO | agg | Sphera |
Solder paste SnAg3.5
technology mix ;
production mix, at plant ;
SnAg3.5 | GLO | agg | Sphera |
Solder paste SnAg3.5Cu0.7 (SAC-Lot)
technology mix ;
production mix, at plant ;
SnAg3.5Cu0.7 (SAC-Lot) | GLO | agg | Sphera |
Solder paste SnAg3Cu0.5 (SAC-Lot)
technology mix ;
production mix, at plant ;
SnAg3Cu0.5 (SAC-Lot) | GLO | agg | Sphera |
Solder paste SnAg4Cu0.6
technology mix ;
production mix, at plant ;
SnAg4Cu0.6 | GLO | agg | Sphera |
Solder paste SnCu0.7
technology mix ;
production mix, at plant ;
SnCu0.7 | GLO | agg | Sphera |
Solder paste SnCu0.7Ag0.3
technology mix ;
production mix, at plant ;
SnCu0.7Ag0.3 | GLO | agg | Sphera |
Solder paste SnCu0.7Ni0.05
technology mix ;
production mix, at plant ;
SnCu0.7Ni0.05 | GLO | agg | Sphera |
Solder paste SnIn10Ag3.1
technology mix ;
production mix, at plant ;
SnIn10Ag3.1 | GLO | agg | Sphera |
Solder paste SnPb34Ag2
technology mix ;
production mix, at plant ;
SnPb34Ag2 | GLO | agg | Sphera |
Solder paste SnPb36
technology mix ;
production mix, at plant ;
SnPb36 | GLO | agg | Sphera |
Solder paste SnZn9
technology mix ;
production mix, at plant ;
SnZn9 | GLO | agg | Sphera |
Thermistor SMD NTC 0402 (ca. 4mg)
technology mix ;
production mix, at plant ;
NTC 0402 (ca. 4mg) | GLO | agg | Sphera |
Thermistor SMD NTC 0603 (6mg)
technology mix ;
production mix, at plant ;
NTC 0603 (6mg) | GLO | agg | Sphera |
Thermistor SMD NTC 0805 (13mg)
technology mix ;
production mix, at plant ;
NTC 0805 (13mg) | GLO | agg | Sphera |
Thermistor SMD NTC 1206 (18mg)
technology mix ;
production mix, at plant ;
NTC 1206 (18mg) | GLO | agg | Sphera |
Thermistor SMD PTC (400mg) 6.3x8x3.3
technology mix ;
production mix, at plant ;
PTC (400mg) 6.3x8x3.3 | GLO | agg | Sphera |
Thermistor THT NTC, Leaded Disk (120mg) 2.5xD43
technology mix ;
production mix, at plant ;
Leaded Disk (120mg) D2.5x43 | GLO | agg | Sphera |
Thermistor THT NTC, Leaded Disk (250mg) 4.5xD41
technology mix ;
production mix, at plant ;
Leaded Disk (250mg) D4.5x41 | GLO | agg | Sphera |
Thermistor THT PTC Overcurrent Protection, Leaded Disk (980mg) 12xD35
technology mix ;
production mix, at plant ;
Leaded Disk (980mg) D12x35 | GLO | agg | Sphera |
Thermistor THT PTC Switch, Leaded Disk (420mg) 6xD13
technology mix ;
production mix, at plant ;
Leaded Disk (420mg) D6x13 | GLO | agg | Sphera |
Thermistor THT PTC Temp Sensor, Leaded Disk (250mg) 4xD42 PE
technology mix ;
production mix, at plant ;
Leaded Disk (250mg) D4x42 PE | GLO | agg | Sphera |
Transistor D2PAK TO263 (1.38g) 10.3x9.6x4.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
1.38g, 10.3x9.6x4.5 | GLO | agg | Sphera |
Transistor DPAK TO252 (290mg) 6.6x6.2x2.2
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Transistor power THT/SMD SOT93/TO218 3 leads (4.70g) 15.5x12.9x4.7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Transistor power THT/SMD SOT93/TO218 7 leads (4.80g) 15.5x12.9x4.7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Transistor signal SOT223 3 leads (110mg) 3.8x7.65x2.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
110mg, 3.8x7.65x2.3 | GLO | agg | Sphera |
Transistor signal SOT223 8 leads (180mg) 3.8x7.65x3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Transistor signal SOT23 3 leads (10mg) 1.4x3x1
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
10mg, 1.4x3x1 | GLO | agg | Sphera |
Transistor signal SOT23 8 leads (18mg) 1.4x3x2
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
18mg, 1.4x3x2 | GLO | agg | Sphera |
Transistor signal SOT-883 (SC-101/XQFN3) (0.855 mg) 1.0 x 0.6 x 0.48
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
(0.855 mg) 1.0 x 0.6 x 0.48 | GLO | agg | Sphera |
Transistor THT SOT82 (720mg) 10.6x7.6x2.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant | GLO | agg | Sphera |
Transistor THT TO92 (250mg) D4.8x5.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing ;
production mix, at plant ;
250mg, D4.8x5.3 | GLO | agg | Sphera |
Varistor THT VDR, Leaded Disk (2g) D12x25
technology mix ;
production mix, at plant ;
Leaded Disk (2g) D12x25 | GLO | agg | Sphera |
